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2n7000/7002, vq1000j/p, bs170 siliconix s-52429erev. e, 28-apr-97 1 n-channel enhancement-mode mosfet transistors product summary part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) 2n7000 5 @ v gs = 10 v 0.8 to 3 0.2 2N7002 7.5 @ v gs = 10 v 1 to 2.5 0.115 vq1000j 60 5.5 @ v gs = 10 v 0.8 to 2.5 0.225 vq1000p 5.5 @ v gs = 10 v 0.8 to 2.5 0.225 bs170 5 @ v gs = 10 v 0.8 to 3 0.5 features benefits applications low on-resistance: 2.5 low threshold: 2.1 v low input capacitance: 22 pf fast switching speed: 7 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems solid-state relays 2N7002 (72)* *marking code for to-236 to-226aa (to-92) top view s d g 1 2 3 g to-236 (sot-23) s d top view 2 3 1 plastic: vq1000j sidebraze: vq1000p top view to-92-18rm (to-18 lead form) d s g 1 2 3 2n7000 bs170 1 2 3 4 5 6 7 14 13 12 11 10 9 8 top view dual-in-line d 1 d 4 s 1 s 4 g 1 g 4 nc nc g 2 g 3 s 2 s 3 d 2 d 3 n n n n updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70226.
2n7000/7002, vq1000j/p, bs170 2 siliconix s-52429erev. e, 28-apr-97 absolute maximum ratings (t a = 25 c unless otherwise noted) single total quad parameter symbol 2n7000 2N7002 vq1000j vq1000p vq1000j/p bs170 unit drain-source voltage v ds 60 60 60 60 60 gate-source voltageenon-repetitive v gsm 40 40 30 25 v gate-source voltageecontinuous v gs 20 20 20 20 20 continuous drain current t a = 25 c i d 0.2 0.115 0.225 0.225 0.5 (t j = 150 c) t a = 100 c i d 0.13 0.073 0.14 0.14 0.175 a pulsed drain current a i dm 0.5 0.8 1 1 power dissipation t a = 25 c p d 0.4 0.2 1.3 1.3 2 0.83 w power dissipation t a = 100 c p d 0.16 0.08 0.52 0.52 0.8 w maximum junction-to-ambient r thja 312.5 625 96 96 62.5 156 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. b. t p 50 s. specifications a for 2n7000 and 2N7002 limits 2n7000 2N7002 parameter symbol test conditions typ b min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 70 60 60 gate threshold voltage v gs(th) v ds = v gs , i d = 1 ma 2.1 0.8 3 v gate - threshold voltage v gs(th) v ds = v gs , i d = 0.25 ma 2.0 1 2.5 v ds = 0 v, v gs = 15 v 10 gate-body leakage i gss v ds = 0 v, v gs = 20 v 10 0 na v ds = 48 v, v gs = 0 v 1 zero gate voltage drain current i dss t c = 125 c 1000 a zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a t c = 125 c 500 on state drain current c i d( ) v ds = 10 v, v gs = 4.5 v 0.35 0.075 a on - state drain current c i d(on) v ds = 7.5 v, v gs = 10 v 1 0.5 a v gs = 4.5 v, i d = 0.075 a 4.5 5.3 v gs = 5 v, i d = 0.05 a 3.2 7.5 drain-source on-resistance c r ds(on) t c = 125 c 5.8 13.5 v gs = 10 v, i d = 0.5 a 2.4 5 7.5 = 125 c 4.4 9 13.5 forward transconductance c g fs v ds = 10 v, i d = 0.2 a 100 80 ms common source output conductance c g os v ds = 5 v, i d = 0.05 a 0.5 ms dynamic input capacitance c iss v 25 v v 0v 22 60 50 output capacitance c oss v ds = 25 v , v gs = 0 v f = 1 mhz 11 25 25 pf reverse transfer capacitance c rss f 1 mhz 2 5 5
2n7000/7002, vq1000j/p, bs170 siliconix s-52429erev. e, 28-apr-97 3 specifications a for 2n7000 and 2N7002 limits 2n7000 2N7002 parameter symbol test conditions typ b min max min max unit switching e turn-on time t on
7 10 turn-off time t off
7 10 ns turn-on time t on
7 20 ns turn-off time t off
11 20 notes a. t a = 25 c unless otherwise noted.d. vnbf06 b. for design aid only, not subject to production testing. c. pulse test: pw 80 s duty cycle 1%. d. this parameter not registered with jedec. e. switching time is essentially independent of operating temperature. specifications a for vq1000j/p and bs170 limits vq1000j/p bs170 parameter symbol test conditions typ b min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 70 60 60 v gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 2.1 0.8 2.5 0.8 3 v v ds = 0 v, v gs = 10 v 100 gate-body leakage i gss = 125 c 500 na v ds = 0 v, v gs = 15 v 10 v ds = 25 v, v gs = 0 v 0.5 zero gate voltage drain current i dss v ds = 48 v, v gs = 0 v, = 125 c 500 a v ds = 60 v, v gs = 0 v 10 on-state drain current c i d(on) v ds = 10 v, v gs = v 1 0.5 a v gs = 5 v, i d = a 4 7.5 drain source on resistance c r ds( ) v gs = v, i d = a 2.3 5 drain - source on - resistance c r ds(on) v gs = v, i d = a 2.3 5.5 = 125 c 4.2 7.6 forward transconductance c g f v ds = 10 v, i d = a 100 forward transconductance c g fs v ds = 10 v, i d = a 100 ms common source output conductance c g os v ds =5 v, i d = 0.05 a 0.5 dynamic input capacitance c iss v 25 v v 0v 22 60 60 output capacitance c oss v ds = 25 v , v gs = 0 v f = 1 mhz 11 25 pf reverse transfer capacitance c rss f 1 mhz 2 5
2n7000/7002, vq1000j/p, bs170 4 siliconix s-52429erev. e, 28-apr-97 specifications a for vq1000j/p and bs170 limits vq1000j/p bs170 parameter symbol test conditions typ b min max min max unit switching d turn-on time t on

7 10 turn-off time t off

7 10 ns turn-on time t on

7 10 ns turn-off time t off

7 10 notes a. t a = 25 c unless otherwise noted. vnbf06 b. for design aid only, not subject to production testing. c. pulse test: pw 80 s duty cycle 1%. d. switching time is essentially independent of operating temperature. typical characteristics (25 c unless otherwise noted) 0 0.2 0.4 0.6 0.8 1.0 0123456 0 0.2 0.4 0.6 0.8 1.0 012345678 output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs = 10, 9, 8, 7 v 6.5 v v gs gate-to-source voltage (v) drain current (a) i d t a = 55 c 25 c 125 c 6 v 5.5 v 5 v 4.5 v 4 v 3.5 v 3 v 2.5 v 2, 1 v
2n7000/7002, vq1000j/p, bs170 siliconix s-52429erev. e, 28-apr-97 5 typical characteristics (25 c unless otherwise noted) 0 4 8 12 16 20 0 400 800 1200 1600 2000 2400 0 0.5 1.0 1.5 2.0 55 30 5 20 45 70 95 120 145 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1.0 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 gate charge on-resistance vs. drain current gate-to-source voltage (v) q g total gate charge (pc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 30 v i d = 0.5 a on-resistance ( r ds(on) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v, r ds @ 0.5 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) r ds @ 10 v = v gs r ds @ 5 v = v gs t j = 25 c v gs = 5 v, r ds @ 0.05 a v gs = 0 v f = 1 mhz 0.001 0.010 0.100 1.000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 source-drain diode forward voltage on-resistance vs. gate-to-source voltage on-resistance ( r ds(on) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s 0 1 2 3 4 5 6 0 2 4 6 8 101214161820 500 ma r ds = 50 ma t j = 25 c t j = 125 c
2n7000/7002, vq1000j/p, bs170 6 siliconix s-52429erev. e, 28-apr-97 typical characteristics (25 c unless otherwise noted) threshold voltage t j temperature ( c) 0.75 0.50 0.25 0.00 0.25 0.50 50 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 k normalized effective transient thermal impedance, junction-to-ambient (to-226aa, bs170 only) normalized effective transient thermal impedance t 1 square wave pulse duration (sec) 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2

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